A semiconductor device includes: semiconductor layer having surface and rear surface; insulating film formed on the surface; first and second surface electrode layers formed on the insulating film; rear electrode layer formed on the rear surface; active region set in region of the surface covered with the first surface electrode layer; capacitor region set in region of the surface covered with the second surface electrode layer; first trench formed in the active region; first insulating film formed on inner surface of the first trench; first embedded electrode embedded in the first trench and controlling ON/OFF of current flowing between the first surface electrode layer and the rear electrode layer; second trench formed in the capacitor region; second insulating film formed on inner surface of the second trench; and second embedded electrode embedded in the second trench and electrically connected to the first surface electrode layer.