Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15250998Application Date: 2016-08-30
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Publication No.: US11257900B2Publication Date: 2022-02-22
- Inventor: Shoji Kitamura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JPJP2014-189477 20140917
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/872 ; H01L29/16 ; H01L29/36

Abstract:
A semiconductor device, including a substrate of a first conductivity type, an active region and a termination structure portion formed on a front surface of the substrate, and a plurality of regions of a second conductivity type formed concentrically surrounding the periphery of the active region in the termination structure portion. Each region has a higher impurity concentration than one of the regions adjacent thereto on an outside thereof. The plurality regions include first and second semiconductor regions, and an intermediate region sandwiched between, and in contact with, the first and second semiconductor regions. The intermediate region includes a plurality of first subregions and a plurality of second subregions that are alternately arranged along a path in parallel to a boundary between the active region and the termination structure portion, the second subregions having a lower impurity concentration than the first subregions.
Public/Granted literature
- US20160372540A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-12-22
Information query
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