Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
-
Application No.: US17029495Application Date: 2020-09-23
-
Publication No.: US11257933B2Publication Date: 2022-02-22
- Inventor: Huaxiang Yin , Qingzhu Zhang , Renren Xu
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Goodwin Procter LLP
- Priority: CN201911317194.7 20191219
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/092 ; H01L29/786 ; H01L29/423 ; H01L21/8238
Abstract:
A method for manufacturing a semiconductor device is provided. A first substrate and at least one second substrate are provided. A single crystal lamination structure is formed on the first substrate. The single crystal lamination structure includes at least one hetero-material layer and at least one channel material layer that are alternately laminated, each of the at least one hetero-material layer is bonded to an adjacent one of the at least one channel material layer at a side away from the first substrate, and each of the at least one channel material layer is formed from one of the at least one second substrate. At least one layer of nanowire or nanosheet is formed from the single crystal lamination structure. A gate dielectric layer and a gate which surround each of the at least one layer of nanowire or nanosheet is formed. A semiconductor device is also provided.
Public/Granted literature
- US20210193822A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-06-24
Information query
IPC分类:
