- Patent Title: Semiconductor device and semiconductor device manufacturing method
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Application No.: US15565826Application Date: 2016-04-22
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Publication No.: US11257944B2Publication Date: 2022-02-22
- Inventor: Shigenari Okada , Masaki Nagata
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JPJP2015-090576 20150427,JPJP2015-090577 20150427
- International Application: PCT/JP2016/062810 WO 20160422
- International Announcement: WO2016/175152 WO 20161103
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/10 ; H01L21/28 ; H01L27/02 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L27/06
Abstract:
A semiconductor device according to the present invention includes a semiconductor layer, a gate trench defined in the semiconductor layer, a first insulating film arranged on the inner surface of the gate trench, a gate electrode arranged in the gate trench via the first insulating film, and a source layer, a body layer, and a drain layer arranged laterally to the gate trench, in which the first insulating film includes, at least at the bottom of the gate trench, a first portion and a second portion with a film elaborateness lower than that of the first portion from the inner surface of the gate trench in the film thickness direction.
Public/Granted literature
- US20180114857A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2018-04-26
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