An LDMOS transistor device may be provided, including a substrate having a conductivity region arranged therein, a first isolation structure arranged within the substrate, a source region and a drain region arranged within the conductivity region, a second isolation (local isolation) structure arranged between the source region and the drain region, and a gate structure arranged at least partially within the second isolation structure. The first isolation structure may extend along at least a portion of a border of the conductivity region, and a depth of the second isolation structure may be less than a depth of the first isolation structure. In use, a channel for electron flow may be formed along at least a part of a side of the gate structure arranged within the second isolation (local isolation) structure.