A shielding member placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, including a crystal growth container including the loading portion which accommodates a SiC source in an inner bottom portion; a crystal installation portion facing the loading portion, and a heating unit configured to heat the crystal growth container. The device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the loading portion. The shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container. When the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates is 0.5 or more.