Invention Grant
- Patent Title: Semiconductor device and including an optical waveguide and method of manufacturing the same
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Application No.: US16700580Application Date: 2019-12-02
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Publication No.: US11262500B2Publication Date: 2022-03-01
- Inventor: Tetsuya Iida , Yasutaka Nakashiba , Seigo Namioka , Tomoo Nakayama
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Main IPC: G02B6/122
- IPC: G02B6/122 ; G02B6/13 ; G02F1/025 ; G02B6/12
Abstract:
A semiconductor device includes a semiconductor substrate having a first surface, a second surface opposite to the first surface, and having a first recess portion formed on the first surface, a first cladding layer located in the first recess portion, and a first optical waveguide formed on the first cladding layer. The first optical waveguide overlaps with the first cladding layer in plan view.
Public/Granted literature
- US20210165160A1 SEMICONDUCTOR DEVICE AND INCLUDING AN OPTICAL WAVEGUIDE AND METHOD OF MANAFACTURING THE SAME Public/Granted day:2021-06-03
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