• Patent Title: Memory system for adjusting difference between operation time points in sequential command operations performed in memory device, and operation method thereof
  • Application No.: US16940056
    Application Date: 2020-07-27
  • Publication No.: US11262950B2
    Publication Date: 2022-03-01
  • Inventor: Dong Yeob Chun
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2020-0035469 20200324
  • Main IPC: G06F3/06
  • IPC: G06F3/06
Memory system for adjusting difference between operation time points in sequential command operations performed in memory device, and operation method thereof
Abstract:
A memory system containing: a nonvolatile memory device including a plurality of memory dies that each perform a plurality of command operations, and a controller configured to: store, in a preset internal space, profile information for changes in power consumption for each of a operation sections included in each of the command operations, check, from the profile information, the changes in power consumption for each operation section of a first and second command when sequentially propagating the first and second command to the memory dies, calculate, based on the checked changes in power consumption for each operation section, a maximum length of an overlap operation section between the first and second command in which peak power is maintained at or below a first reference power, and adjust, a difference between time points for performing the first and second command based on the calculated maximum length of the overlap operation section.
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