Invention Grant
- Patent Title: Addition method, semiconductor device, and electronic device
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Application No.: US16649948Application Date: 2018-11-05
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Publication No.: US11262981B2Publication Date: 2022-03-01
- Inventor: Shunpei Yamazaki , Hajime Kimura , Takahiro Fukutome
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2017-221455 20171117,JPJP2018-027238 20180219
- International Application: PCT/IB2018/058647 WO 20181105
- International Announcement: WO2019/097350 WO 20190523
- Main IPC: G06F7/499
- IPC: G06F7/499 ; G06F7/501 ; G06F7/57 ; G06F9/30

Abstract:
An adder circuit inhibiting overflow is provided. A first memory, a second memory, a third memory, and a fourth memory are included. A step of supplying first data with a sign to the first memory and supplying the first data with a positive sign stored in the first memory, to the second memory; a step of supplying the first data with a negative sign stored in the second memory, to the third memory; a step of generating second data by adding the first data with a positive sign stored in the second memory and the first data with a negative sign stored in the third memory; and a step of storing the second data in the fourth memory are included. When the second data stored in the fourth memory are all second data with a positive sign or all second data with a negative sign, all the second data stored in the fourth memory are added.
Public/Granted literature
- US20200278837A1 ADDITION METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2020-09-03
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