Invention Grant
- Patent Title: Computing system for gas flow simulation, and simulation method
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Application No.: US15996484Application Date: 2018-06-03
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Publication No.: US11263368B2Publication Date: 2022-03-01
- Inventor: Sang-Yub Ie , Jung-Geun Jee , Jae-Myung Choe
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2017-0117746 20170914
- Main IPC: G06F30/20
- IPC: G06F30/20

Abstract:
A computing system includes memory configured to store instructions and a nozzle library, and a processor configured to access the memory and to execute the instructions. The instructions cause the computing system to select at least one nozzle unit as a selected at least one nozzle unit based on the nozzle library and to place the selected at least one nozzle unit at corresponding location coordinates, to create multiple volume meshes for the process chamber, and to simulate the flow of the gas through the selected at least one nozzle unit in the process chamber based on the multiple volume meshes in the process chamber. The nozzle library includes information about multiple nozzle units of which each has multiple volume meshes formed therein. The nozzle units have different shapes from each other.
Public/Granted literature
- US20190080033A1 COMPUTING SYSTEM FOR GAS FLOW SIMULATION, AND SIMULATION METHOD Public/Granted day:2019-03-14
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