Invention Grant
- Patent Title: Semiconductor device and method for operating the same
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Application No.: US17151423Application Date: 2021-01-18
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Publication No.: US11264080B1Publication Date: 2022-03-01
- Inventor: Yun Gi Hong
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2020-0110996 20200901
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/408 ; G11C5/14 ; G11C29/50 ; G11C29/12

Abstract:
According to an embodiment, a semiconductor device includes a transmission circuit including first and second transistors coupled in series between a first voltage terminal and a second voltage terminal, and a first common node coupled between the first and second transistors and coupled to a through line, the transmission circuit outputting a signal transferred from an internal circuit to the first common node according to an output control signal; a reception circuit including third and fourth transistors coupled in series between the first voltage terminal and the second voltage terminal, and a second common node coupled between the third and fourth transistors and coupled to the internal circuit, the reception circuit transferring a signal transferred through the through line to the internal circuit according to a first input control signal; and a deterioration acceleration circuit for applying stress to the first and third transistors according to a test signal.
Public/Granted literature
- US20220068352A1 SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME Public/Granted day:2022-03-03
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