Invention Grant
- Patent Title: Data reading circuit of embedded flash memory cell
-
Application No.: US17021550Application Date: 2020-09-15
-
Publication No.: US11264107B2Publication Date: 2022-03-01
- Inventor: Mingyong Huang , Jun Xiao
- Applicant: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Current Assignee: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN202010210569.6 20200324
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/26 ; G11C16/24 ; G11C16/30 ; G11C16/04

Abstract:
The application relates to a data reading circuit of an embedded flash memory cell. The data reading circuit a switch circuit, a current clamp circuit, a current mirror circuit, a reference current source, a precharge circuit and a comparison circuit; the switch circuit includes a transmission gate, one end of the transmission gate is connected with a drain of the embedded flash memory cell, and the other end of the transmission gate is connected with a detection end of the current clamp circuit; a response end of the current clamp circuit is connected with a data node; the current mirror circuit is connected with the reference current source and the data node; an output end of the precharge circuit is connected with the data node; one input end of the comparison circuit is connected with the data node, and the other input end is connected with reference voltage.
Public/Granted literature
- US20210304823A1 DATA READING CIRCUIT OF EMBEDDED FLASH MEMORY CELL Public/Granted day:2021-09-30
Information query