A low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 μm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a B4C sintering aid, or with a sintering aid comprising Al2O3 and Y2O3 with total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.