Invention Grant
- Patent Title: Method for forming etching mask and method for manufacturing semiconductor device
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Application No.: US16997729Application Date: 2020-08-19
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Publication No.: US11264247B2Publication Date: 2022-03-01
- Inventor: Hironobu Sato
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2019-164956 20190910
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/67 ; H01L21/027 ; G03F7/20
Abstract:
According to one or more embodiments, a method for forming an etching mask includes forming a mask layer including a first organic material on a processing object, processing the mask layer to form a pattern including an opening, exposing the mask layer to a first oxidizing gas containing a first metal material such that the first metal material penetrates into the mask layer, and then exposing the mask layer to a first oxidizing gas including hydrogen peroxide or ozone to oxidize the first metal material.
Public/Granted literature
- US20210074549A1 METHOD FOR FORMING ETCHING MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-03-11
Information query
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