Invention Grant
- Patent Title: Semiconductor device, method for manufacturing the same, and semiconductor module
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Application No.: US16479747Application Date: 2018-01-15
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Publication No.: US11264318B2Publication Date: 2022-03-01
- Inventor: Yoshinori Yokoyama , Jun Fujita , Toshiaki Shinohara , Hiroshi Kobayashi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Xsensus LLP
- Priority: JPJP2017-043893 20170308
- International Application: PCT/JP2018/000848 WO 20180115
- International Announcement: WO2018/163599 WO 20180913
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/31 ; H01L23/36 ; H01L23/433

Abstract:
Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.
Public/Granted literature
- US20210296226A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR MODULE Public/Granted day:2021-09-23
Information query
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