Invention Grant
- Patent Title: Semiconductor device having an ultrasonic bonding portion provided between a substrate and a semiconductor chip
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Application No.: US16775423Application Date: 2020-01-29
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Publication No.: US11264348B2Publication Date: 2022-03-01
- Inventor: Fumiyoshi Kawashiro
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2019-161843 20190905
- Main IPC: H01L23/00
- IPC: H01L23/00 ; B06B3/00
Abstract:
A semiconductor device of embodiments includes a substrate; a semiconductor chip provided above the substrate; a first ultrasonic bonding portion provided between the substrate and the semiconductor chip; a first terminal plate electrically connected to the semiconductor chip via the first ultrasonic bonding portion, the first ultrasonic bonding portion being provided on the substrate, and the first terminal plate having a first surface facing the semiconductor chip; and a first adhesive layer provided on the first surface, and the first adhesive layer containing a first adhesive.
Public/Granted literature
- US20210074666A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-03-11
Information query
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