Invention Grant
- Patent Title: Die backend diodes for electrostatic discharge (ESD) protection
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Application No.: US16724259Application Date: 2019-12-21
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Publication No.: US11264373B2Publication Date: 2022-03-01
- Inventor: Aleksandar Aleksov , Adel A. Elsherbini , Feras Eid , Veronica Aleman Strong , Johanna M. Swan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/528 ; H01L29/24 ; H01L29/861 ; H01L29/47 ; H01L29/872 ; H01L29/45
Abstract:
Embodiments may relate to a die with a front-end and a backend. The front-end may include a transistor. The backend may include a signal line, a conductive line, and a diode that is communicatively coupled with the signal line and the conductive line. Other embodiments may be described or claimed.
Public/Granted literature
- US20210193645A1 DIE BACKEND DIODES FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION Public/Granted day:2021-06-24
Information query
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