Invention Grant
- Patent Title: Wrap-around source/drain method of making contacts for backside metals
-
Application No.: US15747423Application Date: 2015-09-25
-
Publication No.: US11264493B2Publication Date: 2022-03-01
- Inventor: Patrick Morrow , Kimin Jun , Il-Seok Son , Donald W. Nelson
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2015/052382 WO 20150925
- International Announcement: WO2017/052630 WO 20170330
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/14 ; H01L23/31 ; H01L23/498 ; H01L23/00 ; H01L29/417 ; H01L23/15
Abstract:
An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.
Public/Granted literature
- US20180219090A1 WRAP-AROUND SOURCE/DRAIN METHOD OF MAKING CONTACTS FOR BACKSIDE METALS Public/Granted day:2018-08-02
Information query
IPC分类:
