Invention Grant
- Patent Title: Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material
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Application No.: US16571798Application Date: 2019-09-16
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Publication No.: US11264499B2Publication Date: 2022-03-01
- Inventor: John J. Pekarik , Steven M. Shank , Anthony K. Stamper , Vibhor Jain , John Ellis-Monaghan
- Applicant: GLOBALFOUNDRIES U.S.Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S.Inc.
- Current Assignee: GLOBALFOUNDRIES U.S.Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/78 ; H01L29/08 ; H01L21/02 ; H01L29/66 ; H01L29/06
Abstract:
One illustrative transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate and a source region and a drain region, each of which comprise an epi cavity with a bottom surface and a side surface. The transistor further includes an interface layer positioned on at least one of the side surface and the bottom surface of the epi cavity in each of the source/drain regions, wherein the interface layer comprises a non-semiconductor material and an epi semiconductor material positioned on at least an upper surface of the interface layer in the epi cavity in each of the source region and the drain region.
Public/Granted literature
Information query
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