A thin film transistor is provided to include a gate, an active layer, a first electrode and a second electrode. The first electrode includes at least two first conductive parts extending in a first direction and a first connection part extending in a second direction intersecting the first direction. The at least two first conductive parts are arranged at intervals along the second direction and a first end of each of the at least first conductive parts is coupled to the first connection part, and two adjacent ones of the at least two first conductive parts form a first U-shaped opening with the first connection part. The second electrode includes at least one second conductive part extending in the first direction, a first end of the second conductive part proximal to the first connection part is in the first U-shaped opening.