Invention Grant
- Patent Title: Light emitting diode (LED) devices with nucleation layer
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Application No.: US16721386Application Date: 2019-12-19
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Publication No.: US11264530B2Publication Date: 2022-03-01
- Inventor: Isaac Wildeson , Toni Lopez , Hee-Jin Kim , Robert Armitage , Parijat Deb
- Applicant: Lumileds LLC
- Applicant Address: US CA San Jose
- Assignee: Lumileds LLC
- Current Assignee: Lumileds LLC
- Current Assignee Address: US CA San Jose
- Agency: Servilla Whitney LLC
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/00
Abstract:
Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.
Public/Granted literature
- US20210193863A1 Light Emitting Diode (LED) Devices With Nucleation Layer Public/Granted day:2021-06-24
Information query
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