Anisotropic etching using photopolymerizable compound
Abstract:
A method of etching an electrically conductive layer structure during manufacturing a component carrier is provided. The method includes carrying out a first etching of at least one exposed region of an electrically conductive layer structure by a first etching composition having a photo-hardenable compound to thereby form a recess in the electrically conductive layer structure, hardening the photo-hardenable compound by irradiation with photons selectively on an upper side wall portion of the recess to thereby cover the upper side wall portion with a photo-hardened compound, carrying out a second etching by a second etching composition selectively on a side wall portion and/or bottom portion of the recess being not covered with the photo-hardened compound, and subsequently removing the photo-hardened compound from the side wall portion. In addition, a component carrier is provided.
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