Invention Grant
- Patent Title: MEMS devices and methods of forming thereof
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Application No.: US16675245Application Date: 2019-11-06
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Publication No.: US11267696B2Publication Date: 2022-03-08
- Inventor: Ranganathan Nagarajan , Jia Jie Xia , Rakesh Kumar , Bevita Kallupalathinkal Chandran
- Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agent Winston Hsu
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
In a non-limiting embodiment, a MEMS device may include a substrate having a device stopper. The device stopper may be integral to the substrate and formed of the substrate material. A thermal dielectric isolation layer may be arranged over the device stopper and the substrate. A device cavity may extend through the substrate and the thermal dielectric isolation layer. The thermal dielectric isolation layer and the device stopper at least partially surround the device cavity. An active device layer may be arranged over the thermal dielectric isolation layer and the device cavity.
Public/Granted literature
- US20210130162A1 MEMS DEVICES AND METHODS OF FORMING THEREOF Public/Granted day:2021-05-06
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