Invention Grant
- Patent Title: Atomic layer polishing method and device therefor
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Application No.: US16644440Application Date: 2018-11-01
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Publication No.: US11268191B2Publication Date: 2022-03-08
- Inventor: Yong Sup Choi , Kang Il Lee , Dong Chan Seok , Soo Ouk Jang , Jong Sik Kim , Seung Ryul Yoo
- Applicant: KOREA INSTITUTE OF FUSION ENERGY
- Applicant Address: KR Daejeon
- Assignee: KOREA INSTITUTE OF FUSION ENERGY
- Current Assignee: KOREA INSTITUTE OF FUSION ENERGY
- Current Assignee Address: KR Daejeon
- Agency: Norton Rose Fulbright US LLP
- Priority: KR10-2017-0144433 20171101
- International Application: PCT/KR2018/013178 WO 20181101
- International Announcement: WO2019/088731 WO 20190509
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/311 ; C23C16/455 ; C23C16/56 ; H01J37/32

Abstract:
An atomic layer polishing method is described. The method includes: scanning the surface of a specimen to measure a peak site on the specimen surface; spraying toward the measured peak site a gas containing an element capable of binding to a first atom, which is an ingredient of the material of the specimen to form a first reaction gas layer in which the first reaction gas binds to the first atom on the surface of the peak; and projecting ions of inert gas to the peak site on which the first reaction gas layer is deposited to separate the first atom bound to the first reaction gas from the specimen.
Public/Granted literature
- US20200216954A1 ATOMIC LAYER POLISHING METHOD AND DEVICE THEREFOR Public/Granted day:2020-07-09
Information query
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