- Patent Title: Semiconductor element and flow rate measurement device using same
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Application No.: US16771879Application Date: 2018-08-06
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Publication No.: US11268841B2Publication Date: 2022-03-08
- Inventor: Norio Ishitsuka , Yasuo Onose
- Applicant: Hitachi Automotive Systems, Ltd.
- Applicant Address: JP Hitachinaka
- Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee Address: JP Hitachinaka
- Agency: Crowell & Moring LLP
- Priority: JPJP2018-025641 20180216
- International Application: PCT/JP2018/029348 WO 20180806
- International Announcement: WO2019/159394 WO 20190822
- Main IPC: G01F1/692
- IPC: G01F1/692 ; B81B7/00
Abstract:
Provided are a semiconductor device and a thermal type fluid flow rate sensor which suppress strain occurring in an aluminum film and suppresses disconnection due to repeated metal fatigue of the aluminum film. The semiconductor device and the thermal type fluid flow rate sensor of the present invention are configured so that the heights of a silicon film and an aluminum film satisfy D>D1 between a flow rate sensor part (immediately above a diaphragm end part) D and a circuit part (LSI part) D1.
Public/Granted literature
- US20210072059A1 Semiconductor Element and Flow Rate Measurement Device Using Same Public/Granted day:2021-03-11
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