Invention Grant
- Patent Title: Multi-layer p-n junction based phase shifter and methods of manufacturing and using the same
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Application No.: US16343991Application Date: 2019-04-19
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Publication No.: US11269201B2Publication Date: 2022-03-08
- Inventor: Qiugui Zhou , Mark Heimbuch
- Applicant: Source Photonics, Inc.
- Applicant Address: US CA West Hills
- Assignee: Source Photonics, Inc.
- Current Assignee: Source Photonics, Inc.
- Current Assignee Address: US CA West Hills
- Agency: Central California IP Group, P.C.
- Agent Andrew D. Fortney
- International Application: PCT/US2019/028254 WO 20190419
- International Announcement: WO2020/214184 WO 20201022
- Main IPC: G02F1/035
- IPC: G02F1/035 ; G02F1/025 ; G02F1/015

Abstract:
An optical phase shifter and a method of making the same are disclosed. The phase shifter includes a substrate, a p-doped electrode and an n-doped electrode on the substrate, a first doped semiconductor layer on the p-doped electrode or the n-doped electrode and in electrical contact with the other electrode, a second doped semiconductor layer on the first doped semiconductor layer, a first vertical region electrically connecting the second doped semiconductor layer with the one electrode, and a cladding layer on or over the second semiconductor layer, the first vertical region, and at least a first sidewall of each of the first and second semiconductor layers. The p-doped electrode and the n-doped electrode form a p-n junction at an interface therebetween. The first and second doped semiconductor layers have the same doping type as the other electrode and the one electrode, respectively.
Public/Granted literature
- US20210373363A1 Multi-Layer P-N Junction Based Phase Shifter and Methods of Manufacturing and Using the Same Public/Granted day:2021-12-02
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