Invention Grant
- Patent Title: Flipped gate voltage reference and method of using
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Application No.: US14182810Application Date: 2014-02-18
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Publication No.: US11269368B2Publication Date: 2022-03-08
- Inventor: Mohammad Al-Shyoukh , Alex Kalnitsky
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G05F3/26
- IPC: G05F3/26 ; G05F3/24

Abstract:
A voltage reference includes a flipped gate transistor configured to receive a first current. The voltage reference further includes a first transistor configured to receive a second current, the first transistor having a first leakage current, wherein the first transistor is connected with the flipped gate transistor in a Vgs subtractive arrangement. The voltage reference further includes an output node configured to output a reference voltage, the output node connected to the first transistor. The voltage reference further includes a second transistor connected to the output node, the second transistor having a second leakage current, wherein the first leakage current is substantially equal to the second leakage current.
Public/Granted literature
- US20150234413A1 FLIPPED GATE VOLTAGE REFERENCE AND METHOD OF USING Public/Granted day:2015-08-20
Information query
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