A non-volatile memory device having processing logic embedded within a memory bank of the non-volatile memory device is disclosed herein. By way of example, commands for controlling the processing logic can be exposed to a host device, enabling the host device to activate processing capacity of the memory bank in conjunction with a memory operation. The processing capacity can be directed by a data command, transmitted by the host device, at read or write data identified by the memory operation. Read data can be processed by the memory bank before being output onto a data interface connected to the memory bank. Likewise, write data received at the memory bank can be processed in conjunction with storing the write data in the non-volatile memory device. A disclose memory device can therefore implement internal processing in conjunction with reading or writing data to a memory device comprising respective banks of two-terminal non-volatile memory.