Invention Grant
- Patent Title: Plasma deposition method, plasma deposition apparatus and method of manufacturing semiconductor device
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Application No.: US16385441Application Date: 2019-04-16
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Publication No.: US11270881B2Publication Date: 2022-03-08
- Inventor: Kaoru Yamamoto , Chang-Hyun Kim , Hyun-Jae Song , Keun-Wook Shin , Hyeon-Jin Shin , Sung-Joo An , Chang-Seok Lee , Kee-Young Jun , Geun-O Jeong , Jang-Hee Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0105731 20180905
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/02 ; H01L21/67

Abstract:
In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.
Public/Granted literature
- US20200075324A1 PLASMA DEPOSITION METHOD, PLASMA DEPOSITION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-03-05
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