A semiconductor device may be provided, including a base layer, an insulating layer arranged over the base layer, a memory structure arranged at least partially within the insulating layer, where the memory structure may include a first electrode, a second electrode, and an intermediate element between the first electrode and the second electrode, and a resistor arranged at least partially within the insulating layer, where the resistor may be arranged in substantially a same horizontal plane with one of the first electrode and the second electrode.