Invention Grant
- Patent Title: Semiconductor structure with protection layer
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Application No.: US16895060Application Date: 2020-06-08
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Publication No.: US11271088B2Publication Date: 2022-03-08
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , SMIC New Technology Research and Development (Shanghai) Corporation
- Applicant Address: CN Shanghai; CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee Address: CN Shanghai; CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201710726800.5 20170822
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L21/311 ; H01L21/265 ; H01L29/786 ; H01L29/775 ; H01L29/417 ; H01L29/06 ; B82Y10/00 ; H01L29/165
Abstract:
Semiconductor structure is provided. The semiconductor structure includes at least one fin on a semiconductor substrate; at least one stacked channel layer formed on the at least one fin, each stacked channel layer having a sacrificial layer and a channel layer on the sacrificial layer; a dummy gate structure formed on the dummy gate structure; openings formed in the at least one stacked channel layer at both sides of the dummy gate structure; and a protective layer formed on sidewall surfaces of the sacrificial layer.
Public/Granted literature
- US20200303515A1 SEMICONDUCTOR STRUCTURE WITH PROTECTION LAYER Public/Granted day:2020-09-24
Information query
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