Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the same

Invention Grant

US11271109B2 Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the same 有权

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Patent Title: Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the same
Application No.: US17007967

Application Date: 2020-08-31
Publication No.: US11271109B2

Publication Date: 2022-03-08
Inventor: Edward Yi Chang , Mau-Chung Frank Chang , Chieh-Hsi Chuang , Jessie Lin
Applicant: NATIONAL CHIAO TUNG UNIVERSITY
Applicant Address: TW Hsinchu
Assignee: NATIONAL CHIAO TUNG UNIVERSITY
Current Assignee: NATIONAL CHIAO TUNG UNIVERSITY
Current Assignee Address: TW Hsinchu
Agency: Rosenberg, Klein & Lee
Priority: TW108142879 20191126
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L29/06 ; H01L29/04 ; H01L29/08 ; H01L29/66 ; H01L29/267 ; H01L21/02 ; H01L21/306 ; H01L29/16 ; H01L29/20

Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the same

Abstract:

A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality.

Public/Granted literature

US20210159338A1 SILICON METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (Si MOSFET) WITH A WIDE-BANDGAP III-V COMPOUND SEMICONDUCTOR GROUP DRAIN AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-05-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的