Invention Grant
- Patent Title: Short wavelength infrared optoelectronic devices having a dilute nitride layer
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Application No.: US16812668Application Date: 2020-03-09
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Publication No.: US11271122B2Publication Date: 2022-03-08
- Inventor: Radek Roucka , Sabeur Siala , Aymeric Maros , Ting Liu , Ferran Suarez , Evan Pickett
- Applicant: ARRAY PHOTONICS, INC.
- Applicant Address: US AZ Tempe
- Assignee: ARRAY PHOTONICS, INC.
- Current Assignee: ARRAY PHOTONICS, INC.
- Current Assignee Address: US AZ Tempe
- Agency: Morrison & Foerster LLP
- Main IPC: H01L31/0304
- IPC: H01L31/0304 ; H01L27/144 ; H01L31/18 ; H01L33/30
Abstract:
Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.
Public/Granted literature
- US20200212237A1 SHORT WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING A DILUTE NITRIDE LAYER Public/Granted day:2020-07-02
Information query
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