Invention Grant
- Patent Title: Light-emitting device with wavelenght conversion layer having quantum dots
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Application No.: US16199755Application Date: 2018-11-26
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Publication No.: US11271141B2Publication Date: 2022-03-08
- Inventor: Maria J. Anc , Darshan Kundaliya , Madis Raukas , David O'Brien
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L33/00 ; H01L33/22 ; H01L33/54
Abstract:
A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.
Public/Granted literature
- US20200168771A1 Light-Emitting Device and Method for Manufacturing a Light-Emitting Device Public/Granted day:2020-05-28
Information query
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