Invention Grant
- Patent Title: Method to form a self-aligned evaporated metal contact in a deep hole and VCSEL with such contact
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Application No.: US14958389Application Date: 2015-12-03
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Publication No.: US11271367B1Publication Date: 2022-03-08
- Inventor: Omar Husam Amer El-Tawil , Kevin Chi-Wen Chang
- Applicant: II-VI OptoElectronic Devices, Inc.
- Applicant Address: US NJ Warren
- Assignee: II-VI OptoElectronic Devices, Inc.
- Current Assignee: II-VI OptoElectronic Devices, Inc.
- Current Assignee Address: US NJ Warren
- Agent Wendy W. Koba
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/042

Abstract:
A method for forming a metal contact in a deep hole in a workpiece. A first hole is formed that extends from the upper surface of the workpiece to a substrate at the bottom of the hole. The hole is then filled with photoresist. Next, a photolithographic process is performed to create a second hole within the photoresist and to expose the substrate; and a wet etch is performed to remove a portion of the substrate. A layer of contact metal is then deposited on the surface of the photoresist. In the second hole, the metal layer is formed on the exposed surface of the substrate and on discontinuous portions of the photoresist on the sidewalls. A liftoff process is then used to remove the photoresist and the metal deposited on the photoresist while leaving the metal at the bottom of the second hole in contact with the substrate.
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