Invention Grant
- Patent Title: Starting circuit
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Application No.: US17056362Application Date: 2019-02-22
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Publication No.: US11271548B2Publication Date: 2022-03-08
- Inventor: Hiroyuki Watanabe
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2018-098489 20180523
- International Application: PCT/JP2019/006918 WO 20190222
- International Announcement: WO2019/225094 WO 20191128
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H03K17/687 ; H03K17/22 ; G05F3/26

Abstract:
A starting circuit capable of further reducing an influence of a variation in the threshold voltage of a transistor is proposed. The starting circuit includes an N-type first MOS transistor whose threshold voltage is near 0 V, a resistor interposed between a source terminal of the first MOS transistor and a ground, and a control circuit controlling a gate voltage of the first MOS transistor. An amount of first current transmitted to a device to be driven and starting the device is controlled according to the control of the gate voltage.
Public/Granted literature
- US20210211119A1 STARTING CIRCUIT Public/Granted day:2021-07-08
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