A memory device is provided. The memory device includes a memory bank configured to store data in one or more memory cells. The memory device further includes a sense amplifier and associated circuitry configured to detect a first threshold representative of a first external voltage ramping down during a power off of the memory device, and one or more switches triggered via the sense amplifier and associated circuitry to provide for a power off sequence for the memory bank based on using a second external voltage ramping down during the power off of the memory device.