Invention Grant
- Patent Title: Dye-sensitized optoelectronic memory
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Application No.: US16556729Application Date: 2019-08-30
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Publication No.: US11276460B2Publication Date: 2022-03-15
- Inventor: Jianxun Sun , Juan Boon Tan , Tu Pei Chen , Eng Huat Toh
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd
- Current Assignee Address: SG Singapore
- Agency: Thompson Hine LLP
- Main IPC: H01G9/00
- IPC: H01G9/00 ; G11C11/42 ; H01L27/105 ; H01G9/04 ; H01G9/20

Abstract:
Structures for an optoelectronic memory and related fabrication methods. A metal oxide layer is located on an interlayer dielectric layer. A layer composed of a donor/acceptor dye is positioned on a portion of the first layer.
Public/Granted literature
- US20210065788A1 DYE-SENSITIZED OPTOELECTRONIC MEMORY Public/Granted day:2021-03-04
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