Invention Grant
- Patent Title: Techniques for a multi-step current profile for a phase change memory
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Application No.: US16903004Application Date: 2020-06-16
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Publication No.: US11276462B2Publication Date: 2022-03-15
- Inventor: Hemant P. Rao , Shylesh Umapathy , Sanjay Rangan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law, PC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Examples may include techniques to implement a SET write operation to a selected memory cell include in a memory array. Examples include selecting the memory cell that includes phase change material and applying various currents over various periods of time during a nucleation stage and a crystal growth stage to cause the memory cell to be in a SET logical state.
Public/Granted literature
- US20210391005A1 TECHNIQUES FOR A MULTI-STEP CURRENT PROFILE FOR A PHASE CHANGE MEMORY Public/Granted day:2021-12-16
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