Provided herein may be a memory device and a method of operating the memory device. The memory device may include a memory block coupled to bit lines and word lines, a voltage generator configured to apply at least one of a program voltage or a verify voltage to a word line selected from among the word lines, page buffers configured to precharge less than all or all of the bit lines during a verify operation performed on the memory cells, an operation logic configured to output verify information related to a verify operation performed during a program operation in response to a command, and a page buffer controller configured to output page buffer control signals so that the less than all of the bit lines are selectively precharged or the all of the bit lines are precharged depending on the verify information.