Invention Grant
- Patent Title: Semiconductor power device and method for producing same
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Application No.: US17069345Application Date: 2020-10-13
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Publication No.: US11276574B2Publication Date: 2022-03-15
- Inventor: Yuki Nakano
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agent Gregory M. Howison
- Priority: JP2011-020729 20110202
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/78 ; H01L29/10 ; H01L29/861 ; H01L29/872 ; H01L21/04 ; H01L29/66 ; H01L29/06 ; H01L29/16 ; H01L21/28 ; H01L27/04 ; H01L21/02 ; H01L29/20 ; H01L29/51
Abstract:
A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.
Public/Granted literature
- US20210043456A1 SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME Public/Granted day:2021-02-11
Information query
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