Invention Grant
- Patent Title: Gate metal patterning to avoid gate stack attack due to excessive wet etching
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Application No.: US16681073Application Date: 2019-11-12
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Publication No.: US11276576B2Publication Date: 2022-03-15
- Inventor: Junli Wang , Alexander Reznicek , Shogo Mochizuki , Joshua Rubin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/092 ; H01L21/28 ; H01L27/088 ; H01L21/3213 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L29/49 ; H01L29/775
Abstract:
A method of forming gate structures to a nanosheet device that includes forming at least two stacks of nanosheets, wherein each nanosheet includes a channel region portion having a gate dielectric layer present thereon. The method may further include forming a dual metal layer scheme on the gate dielectric layer of each nanosheet. The dual metal layer scheme including an etch stop layer of a first composition and a work function adjusting layer of a second composition, wherein the etch stop layer has a composition that provides that the work function adjusting layer is removable by a wet etch chemistry that is selective to the etch stop layer.
Public/Granted literature
- US20200083051A1 GATE METAL PATTERNING TO AVOID GATE STACK ATTACK DUE TO EXCESSIVE WET ETCHING Public/Granted day:2020-03-12
Information query
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