Invention Grant
- Patent Title: Semiconductor device with fin isolation
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Application No.: US17018479Application Date: 2020-09-11
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Publication No.: US11276578B2Publication Date: 2022-03-15
- Inventor: Chang-Yin Chen , Che-Cheng Chang , Chih-Han Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/8234 ; H01L27/088 ; H01L29/78 ; H01L23/31 ; H01L29/66
Abstract:
A first semiconductor fin and a second semiconductor fin are disposed over a substrate. The second semiconductor fin and the first semiconductor fin are aligned substantially along a same line and spaced apart from each other. The first semiconductor fin has a first end portion, the second semiconductor fin has a second end portion, and an end sidewall of the first end portion and is spaced apart from an end sidewall of the second end portion. The gate structure extends substantially perpendicularly to the first semiconductor fin. When viewed from above, the gate structure overlaps with the first end portion of the first semiconductor fin. When viewed from above, the end sidewall of the first end portion of the first semiconductor fin facing the end sidewall of the second end portion of the second semiconductor fin has a re-entrant profile.
Public/Granted literature
- US20210013045A1 SEMICONDUCTOR DEVICE WITH FIN ISOLATION Public/Granted day:2021-01-14
Information query
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