Invention Grant
- Patent Title: Apparatus for stressing semiconductor substrates
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Application No.: US16438003Application Date: 2019-06-11
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Publication No.: US11276583B2Publication Date: 2022-03-15
- Inventor: Robert J. Falster , Vladimir V. Voronkov , John A. Pitney , Peter D. Albrecht
- Applicant: GlobalWafers Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd
- Current Assignee: GlobalWafers Co., Ltd
- Current Assignee Address: TW Hsinchu
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/683 ; H01L21/67 ; H01L21/302 ; H01L21/687 ; C30B25/12
Abstract:
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
Public/Granted literature
- US20190311913A1 APPARATUS FOR STRESSING SEMICONDUCTOR SUBSTRATES Public/Granted day:2019-10-10
Information query
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