Invention Grant
- Patent Title: Ground reference shape for high speed interconnect
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Application No.: US16881750Application Date: 2020-05-22
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Publication No.: US11276655B2Publication Date: 2022-03-15
- Inventor: Shiann-Ming Liou , Gang Zhao
- Applicant: Innogrit Technologies Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: Innogrit Technologies Co., Ltd.
- Current Assignee: Innogrit Technologies Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: IPRO, PLLC
- Agent Xiaomin Huang
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/00 ; H01L23/552 ; H01L21/48

Abstract:
Apparatus and methods are provided for providing provide high-speed interconnect using bond wires. According to various aspects of the subject innovation, the provided techniques may provide a ground shape to shield a high-speed signal wire from the substrate in a semiconductor assembly. In an exemplary embodiment, there is provided an assembly that may comprise a substrate, a semiconductor die attached to the substrate, a signal bond wire connecting a bond pad on the semiconductor die and a bond finger on the substrate, and a ground shape on the substrate to shield the signal wire from the substrate.
Public/Granted literature
- US20210366848A1 GROUND REFERENCE SHAPE FOR HIGH SPEED INTERCONNECT Public/Granted day:2021-11-25
Information query
IPC分类: