Invention Grant
- Patent Title: Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof
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Application No.: US16855161Application Date: 2020-04-22
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Publication No.: US11276762B2Publication Date: 2022-03-15
- Inventor: Daniel Jenner Lichtenwalner
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/78 ; H01L29/36 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor layer structure, a gate insulating pattern on the semiconductor layer structure, a gate electrode on the gate insulating pattern, and an interface layer between the gate insulating pattern and the semiconductor layer structure, the interface layer having a first segment and a second segment with a gap therebetween.
Public/Granted literature
- US20210336022A1 INTERFACE LAYER CONTROL METHODS FOR SEMICONDUCTOR POWER DEVICES AND SEMICONDUCTOR DEVICES FORMED THEREOF Public/Granted day:2021-10-28
Information query
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