Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16558530Application Date: 2019-09-03
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Publication No.: US11276775B2Publication Date: 2022-03-15
- Inventor: Kentaro Ichinoseki , Tatsuya Nishiwaki , Kikuo Aida , Kohei Oasa
- Applicant: KABUSHIKI KAISHA TOSHIBA , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-048329 20190315
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423
Abstract:
According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.
Public/Granted literature
- US20200295180A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-09-17
Information query
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