A semiconductor device capable of miniaturization or high integration and manufacture of a semiconductor device are provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator and first and second conductors over the oxide; a third conductor over the second insulator; a fourth conductor over the first conductor; a fifth conductor over the second conductor; a third insulator over the first insulator and the first and second conductors; a fourth insulator over the second and third insulators and the third conductor; and a fifth insulator over the fourth insulator. The first and second conductors are provided to face each other with the second insulator therebetween. The second insulator is provided along an inner wall of an opening provided in the third insulator, facing side surfaces of the first and second conductors, and a top surface of the oxide. The level of a top surface of the third conductor is higher than the levels of top surfaces of the second and third insulators. The fourth insulator is provided along the top surfaces of the second and third insulators and the top surface and a side surface of the third conductor.