Invention Grant
- Patent Title: Edge incident type semiconductor light receiving device
-
Application No.: US16981634Application Date: 2020-06-04
-
Publication No.: US11276791B2Publication Date: 2022-03-15
- Inventor: Takatomo Isomura , Etsuji Omura
- Applicant: KYOTO SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: KYOTO SEMICONDUCTOR CO., LTD.
- Current Assignee: KYOTO SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Norris McLaughlin, P.A.
- International Application: PCT/JP2020/022097 WO 20200604
- International Announcement: WO2021/245874 WO 20211209
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; G01J1/04 ; H01L31/103

Abstract:
In an edge incident type semiconductor light receiving device that reflects light incident parallel to the main surface of the semiconductor substrate opaque to the incident light to the light receiving section on the main surface side, a light guide section is formed to expose the light receiving section along the light incident direction from the light incident side end of the semiconductor substrate, and in order to guide the light incident on the light guide section to the light receiving section, a light reflection section having a given crossing angle with the main surface is provided at the end of the light guide section in the light incident direction.
Public/Granted literature
- US20210384365A1 EDGE INCIDENT TYPE SEMICONDUCTOR LIGHT RECEIVING DEVICE Public/Granted day:2021-12-09
Information query
IPC分类: