Methods and devices for a spintronic device of spin-orbit torque magnetic random access memory (SOT-MRAM) are provided. A unit cell of a device can comprise a ferromagnetic (or ferrimagnetic or antiferromagnetic) layer on the heavy metal layer, and a current source configured to transmit either non-collinear current pulses in the heavy-metal layer or two perpendicular currents in the heavy metal layer. The current pulses exhibit a phase difference, and the magnitude of a sum of the respective current pulses is constant (in its simplest form) and the flow direction of the pulses is time-dependent.